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Transistor
2SD1996
Silicon NPN epitaxial planer type
For low-voltage output amplification For muting For DC-DC converter
Unit: mm
(0.7) 6.90.1 (4.0) 2.50.1 (0.8)
(1.0) 3.50.1
0.65 max.
q q q q
Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Allowing supply with the radial taping. (Ta=25C)
Ratings 25 20 12 1 0.5 600 150 -55 ~ +150 Unit V V V A A mW C C
14.50.5
s Features
(0.85)
0.45+0.10 -0.05 2.50.5
1.050.05 2.50.5
0.45+0.10 -0.05
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1
2
3
Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available.
1:Emitter 2:Collector 3:Base MT-1-A1 Package
1.20.1 0.65 max. 0.45+0.1 - 0.05
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON resistanse
(HW type)
(Ta=25C)
Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Ron*3
*3R on
Conditions VCB = 25V, IE = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 2V, IC = 0.5A*2 VCE = 2V, IC = 1A*2 IC = 0.5A, IB = 20mA IC = 0.5A, IB = 50mA VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f= 1MHz
min
typ
max 100
(0.8)
Unit nA V V V
25 20 12 200 60 0.13 0.4 1.2 200 10 1.0
*2
800
V V MHz pF
Measurement circuit
1k
Pulse measurement
*1h
FE1
Rank classification
R 200 ~ 350 S 300 ~ 500 T 400 ~ 800
IB=1mA f=1kHz V=0.3V
Rank hFE1
VB
VV
VA
VB 1000() Ron= VA-VB
659
Transistor
PC -- Ta
800 1.2 IB=4.0mA 1.0 Ta=25C 3.5mA 3.0mA 0.8 2.5mA 2.0mA 0.6 1.5mA 0.4 1.0mA 0.5mA 0.2 100 0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5 6
2SD1996
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=75C 25C -25C
VCE(sat) -- IC
IC/IB=25
Collector power dissipation PC (mW)
700 600 500 400 300 200
Collector current IC (A)
0.1
0.3
1
3
10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
100
hFE -- IC
IC/IB=10 1200 VCE=2V 400
fT -- I E
VCB=10V Ta=25C
Base to emitter saturation voltage VBE(sat) (V)
1000
Transition frequency fT (MHz)
0.3 1 3 10
30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C
Forward current transfer ratio hFE
350 300 250 200 150 100 50
800 Ta=75C 600 25C -25C 400
25C
200
0.1
0.3
1
3
10
0 0.01 0.03
0.1
0 -1
-3
-10
-30
-100
Collector current IC (A)
Collector current IC (A)
Emitter current IE (A)
Cob -- VCB
24
Ron -- IB
IE=0 f=1MHz Ta=25C 1000 300 Ron measuring circuit IB=1mA
Collector output capacitance Cob (pF)
20
ON resistance Ron ()
100 30 10 3 1 0.3
VB
V
VA
16
f=1kHz V=0.3V
12
8
4
0 1 3 10 30 100
0.1 0.01 0.03
0.1
0.3
1
3
10
Collector to base voltage VCB (V)
Base current IB (mA)
660
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2001 MAR

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